中国物理B ›› 2004, Vol. 13 ›› Issue (7): 1120-1123.doi: 10.1088/1009-1963/13/7/027

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Anisotropy of the upper critical field in c-axis oriented MgB2 thin films

刘震1, 朱亚彬1, 周岳亮1, 陈正豪1, 吕惠宾1, 杨国桢1, 王淑芳2   

  1. (1)Laboratory of Optical Physics, Institute of Physics & Centre of Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, China; (2)Laboratory of Optical Physics, Institute of Physics & Centre of Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, China; Physics & Technology College, Hebei University, Baoding 071002, China
  • 收稿日期:2003-10-08 修回日期:2003-12-09 出版日期:2004-07-05 发布日期:2005-07-05
  • 基金资助:
    Project supported by the State Key Programme for Basic Research of China (Grant No 1999064604).

Anisotropy of the upper critical field in c-axis oriented MgB2 thin films

Wang Shu-Fang (王淑芳)ab, Liu Zhen (刘震)a, Zhu Ya-Bin (朱亚彬)a, Zhou Yue-Liang (周岳亮)a, Chen Zheng-Hao (陈正豪)a, Lü Hui-Bin (吕惠宾)a, Yang Guo-Zhen (杨国桢)a,    

  1. a Laboratory of Optical Physics, Institute of Physics & Centre of Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, China; b Physics & Technology College, Hebei University, Baoding 071002, China
  • Received:2003-10-08 Revised:2003-12-09 Online:2004-07-05 Published:2005-07-05
  • Supported by:
    Project supported by the State Key Programme for Basic Research of China (Grant No 1999064604).

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摘要： C-axis oriented MgB_2 thin films were synthesized on single-crystal MgO (111) substrates using a chemical vapour deposition technique. The as-formed films revealed a sharp superconducting transition temperature of 38K with the transition width 0.2K. The temperature dependence of the upper critical magnetic field H_{c2}(T) in the films was determined via resistivity for magnetic field H parallel and perpendicular to the c axis of the films. Using the Werthamer－Helfand－Hohenberg formula, we obtained the anisotropy ratio of the upper critical field γ=1.2.

关键词: MgB2 thin films, anisotropy, upper critical field, chemical vapour deposition

Abstract: C-axis oriented MgB$_2$ thin films were synthesized on single-crystal MgO (111) substrates using a chemical vapour deposition technique. The as-formed films revealed a sharp superconducting transition temperature of 38K with the transition width 0.2K. The temperature dependence of the upper critical magnetic field $H_{c2}(T)$ in the films was determined via resistivity for magnetic field H parallel and perpendicular to the c axis of the films. Using the Werthamer－Helfand－Hohenberg formula, we obtained the anisotropy ratio of the upper critical field $\gamma$=1.2.

Key words: MgB2 thin films, anisotropy, upper critical field, chemical vapour deposition

中图分类号:  (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

  • 81.15.Gh
74.62.Bf (Effects of material synthesis, crystal structure, and chemical composition) 75.30.Gw (Magnetic anisotropy)