中国物理B ›› 2004, Vol. 13 ›› Issue (10): 1597-1600.doi: 10.1088/1009-1963/13/10/002

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Electron behaviour in CH4/H2 gas mixture in electron-assisted chemical vapour deposition

董丽芳, 马博琴, 王志军   

  1. College of Physics Science and Technology, Hebei University, Baoding 071002, China
  • 收稿日期:2004-01-14 修回日期:2004-03-10 出版日期:2004-10-20 发布日期:2005-06-20
  • 基金资助:
    Project supported by the Natural Science Foundation of Hebei Province, China (Grant No 502121).

Electron behaviour in CH4/H2 gas mixture in electron-assisted chemical vapour deposition

Dong Li-Fang (董丽芳), Ma Bo-Qin (马博琴), Wang Zhi-Jun (王志军)   

  1. College of Physics Science and Technology, Hebei University, Baoding 071002, China
  • Received:2004-01-14 Revised:2004-03-10 Online:2004-10-20 Published:2005-06-20
  • Supported by:
    Project supported by the Natural Science Foundation of Hebei Province, China (Grant No 502121).

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摘要： The behaviour of electrons in CH$_{4}$/H$_{2}$ gas mixture in electron-assisted chemical vapour deposition of diamond is investigated using Monte Carlo simulation. The electron drift velocity in gas mixture is obtained over a wide range of E/P (the ratio of the electric field to gas pressure) from 1500 to 300000 (V/m kPa$^{-1}$). The electron energy distribution and average energy under different gas pressure (0.1－20kPa) and CH_{4} concentration (0.5%－10.0%) are calculated. Their effects on the diamond growth are also discussed. It is believed that these results will be helpful to the selection of optimum experimental conditions for high quality diamond film deposition.

关键词: Monte Carlo simulation, chemical vapour deposition, electron swarm, drift velocity

Abstract: The behaviour of electrons in CH$_{4}$/H$_{2}$ gas mixture in electron-assisted chemical vapour deposition of diamond is investigated using Monte Carlo simulation. The electron drift velocity in gas mixture is obtained over a wide range of E/P (the ratio of the electric field to gas pressure) from 1500 to 300000 (V/m kPa$^{-1}$). The electron energy distribution and average energy under different gas pressure (0.1－20kPa) and CH$_{4}$ concentration (0.5%－10.0%) are calculated. Their effects on the diamond growth are also discussed. It is believed that these results will be helpful to the selection of optimum experimental conditions for high quality diamond film deposition.

Key words: Monte Carlo simulation, chemical vapour deposition, electron swarm, drift velocity

中图分类号:  (Theory and models of film growth)

  • 81.15.Aa
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))