中国物理B ›› 2004, Vol. 13 ›› Issue (10): 1597-1600.doi: 10.1088/1009-1963/13/10/002
董丽芳, 马博琴, 王志军
Dong Li-Fang (董丽芳), Ma Bo-Qin (马博琴), Wang Zhi-Jun (王志军)
摘要: The behaviour of electrons in CH$_{4}$/H$_{2}$ gas mixture in electron-assisted chemical vapour deposition of diamond is investigated using Monte Carlo simulation. The electron drift velocity in gas mixture is obtained over a wide range of E/P (the ratio of the electric field to gas pressure) from 1500 to 300000 (V/m kPa$^{-1}$). The electron energy distribution and average energy under different gas pressure (0.1-20kPa) and CH_{4} concentration (0.5%-10.0%) are calculated. Their effects on the diamond growth are also discussed. It is believed that these results will be helpful to the selection of optimum experimental conditions for high quality diamond film deposition.
中图分类号: (Theory and models of film growth)