中国物理B ›› 2001, Vol. 10 ›› Issue (8): 751-755.doi: 10.1088/1009-1963/10/8/317

• • 上一篇    

CURRENT-DEPENDENT POSITIVE MAGNETORESISTANCE IN Ga-DOPED La0.5Ca0.5MnO3

张西祥1, 陈金松2, 陈新3, 王志宏4, 李润伟4, 沈保根4, 赵宏武4, 詹文山4   

  1. (1)Department of Physics, The Hong Kong University of Science and Technology, Kowloon, Hong Kong, China; (2)Department of Physics, University of Science and Technology of China, Hefei 230026, China; (3)Department of Physics, University of Science and Technology of China, Hefei 230026, China; State Key Laboratory of Magnetism, Institute of Physics and Center of Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, China; (4)State Key Laboratory of Magnetism, Institute of Physics and Center of Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, China
  • 收稿日期:2001-03-01 修回日期:2001-05-15 出版日期:2001-08-15 发布日期:2005-06-12
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 19934003) and the State Key program of Research (Grant No. G1998061310).

CURRENT-DEPENDENT POSITIVE MAGNETORESISTANCE IN Ga-DOPED La0.5Ca0.5MnO3

Chen Xin (陈新)ab, Wang Zhi-hong (王志宏)b, Li Run-wei (李润伟)b, Shen Bao-gen (沈保根)b, Zhao Hong-wu (赵宏武)b, Zhan Wen-shan (詹文山)b, Chen Jin-song (陈金松)a， Zhang Xi-xiang (张西祥)c   

  1. a Department of Physics, University of Science and Technology of China, Hefei 230026, China; b State Key Laboratory of Magnetism, Institute of Physics and Center of Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, China; c Department of Physics, The Hong Kong University of Science and Technology, Kowloon, Hong Kong, China
  • Received:2001-03-01 Revised:2001-05-15 Online:2001-08-15 Published:2005-06-12
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 19934003) and the State Key program of Research (Grant No. G1998061310).

PDF (PC)

479

赞

摘要： The magnetic and transport properties of the Ga-doped charge-ordering state La0.5Ca0.5MnO3 have been studied. A current-dependent large positive magnetoresistance (1080%) at 5 K was observed. These observations are interpreted in terms of the spin-dependent tunnelling process between ferromagnetic clusters embedded in an antiferromagnetic matrix.

关键词: manganese oxide, magnetoresistance, spin-dependent tunnelling

Abstract: The magnetic and transport properties of the Ga-doped charge-ordering state La0.5Ca0.5MnO3 have been studied. A current-dependent large positive magnetoresistance (1080%) at 5 K was observed. These observations are interpreted in terms of the spin-dependent tunnelling process between ferromagnetic clusters embedded in an antiferromagnetic matrix.

Key words: manganese oxide, magnetoresistance, spin-dependent tunnelling

中图分类号:  (Magnetic oxides)

  • 75.47.Lx
75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures))