中国物理B ›› 1998, Vol. 7 ›› Issue (11): 801-809.doi: 10.1088/1004-423X/7/11/001

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INFLUENCE OF INTERFACE KINETICS ON THE RELAXATION BEHAVIOR IN SOLUTION SYSTEM FOR CRYSTAL GROWTH UNDER MICROGRAVITY

朱振和1, 葛培文2, 许政一2, 霍崇儒2   

  1. (1)Department of Physics, Central University for Nationalities, Beijing 100081, China; (2)Institute of Physics, Academia Sinica, Beijing 100080, China
  • 收稿日期:1997-11-12 修回日期:1998-02-09 出版日期:1998-11-20 发布日期:1998-11-20

INFLUENCE OF INTERFACE KINETICS ON THE RELAXATION BEHAVIOR IN SOLUTION SYSTEM FOR CRYSTAL GROWTH UNDER MICROGRAVITY

Zhu Zhen-he (朱振和)a, Ge Pei-wen (葛培文)b, Xu Zheng-yi (许政一)b, Huo Chong-ru (霍崇儒)b   

  1. a Department of Physics, Central University for Nationalities, Beijing 100081, China; b Institute of Physics, Academia Sinica, Beijing 100080, China
  • Received:1997-11-12 Revised:1998-02-09 Online:1998-11-20 Published:1998-11-20

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摘要： The influence of the interface kinetics at the growth face of a crystal and at the surface of material of solute source on the relaxation behavior in a solution system for crystal growth under microgravity is studied. Because the variation of the solution density caused by the solute concentration change can be omitted and only that caused by the temperature change is taken into account, the interface kinetics does not influence the relaxation behaviors of the fluid velocity and the temperature distribution index Sθ (see text). The relaxations of the concentration distribution index Sφ (see text) and dimensionless average growth rate of crystal \bar{V}cg are calculated under the square pulsed fluctuations of the gravity level or the temperature at the growth face of crystal. Introduction of the interface kinetics makes the value of Sφ enlarged and the perturbation peak of the Sφ-τ curve caused by the gravity level or temperature fluctuation lowered. While the perturbation peak and the valley of the \bar{V}cg-τ curve caused by the negatively and positively pulsed temperature fluctuation, respectively, is lowered and shallowed by the interface kinetics.

Abstract: The influence of the interface kinetics at the growth face of a crystal and at the surface of material of solute source on the relaxation behavior in a solution system for crystal growth under microgravity is studied. Because the variation of the solution density caused by the solute concentration change can be omitted and only that caused by the temperature change is taken into account, the interface kinetics does not influence the relaxation behaviors of the fluid velocity and the temperature distribution index $S_{\theta}$ (see text). The relaxations of the concentration distribution index $S_{\phi}$ (see text) and dimensionless average growth rate of crystal $\bar{V}_{\rm cg}$ are calculated under the square pulsed fluctuations of the gravity level or the temperature at the growth face of crystal. Introduction of the interface kinetics makes the value of $S_{\phi}$  enlarged and the perturbation peak of the $S_{\phi}$ -$\tau$ curve caused by the gravity level or temperature fluctuation lowered. While the perturbation peak and the valley of the $\bar{V}_{\rm cg}$-$\tau$ curve caused by the negatively and positively pulsed temperature fluctuation, respectively, is lowered and shallowed by the interface kinetics.

中图分类号:  (Growth from solutions)

  • 81.10.Dn
05.40.-a (Fluctuation phenomena, random processes, noise, and Brownian motion) 81.10.Mx (Growth in microgravity environments)