中国物理B ›› 1996, Vol. 5 ›› Issue (6): 463-469.doi: 10.1088/1004-423X/5/6/008

• • 上一篇    

OPTICAL PROPERTIES OF δ-DOPED GaAs AND GaAs/Al0.1Ga0.9As SUPERLATTICES

程文超, 夏建白, 徐士杰, 郑厚植, 罗克俭, 张鹏华, 杨小平   

  1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Academia Sinica, Beijing 100083, China
  • 收稿日期:1995-04-20 修回日期:1995-11-21 出版日期:1996-06-20 发布日期:1996-06-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China.

OPTICAL PROPERTIES OF $\delta$-DOPED GaAs AND GaAs/Al0.1Ga0.9As SUPERLATTICES

CHENG WEN-CHAO (程文超), XIA JIAN-BAI (夏建白), XU SHI-JIE (徐士杰), ZHENG HOU-ZHI (郑厚植), LUO KE-JIAN (罗克俭), ZHANG PENG-HUA (张鹏华), YANG XIAO-PING (杨小平)   

  1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Academia Sinica, Beijing 100083, China
  • Received:1995-04-20 Revised:1995-11-21 Online:1996-06-20 Published:1996-06-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China.

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摘要： Radiative transition in δ-doped GaAs superlattices with and without Al0.1Ga0.9As barriers is investigated by using photoluminescence at low temperatures. The experimental results show that the transition mechanism of δ-doped superlattices is very different from that of ordinary superlattices. Emission intensity of the transition from the electron first excited state to hole states is obviously stronger than that from the electron ground state to hole states due to larger overlap integral between wavefunctions of electrons in the first excited state and hole states. Based on the effective mass theory we have calculated the self-consistent potentials, optical transition matrix elements and photoluminescence spectra for two different samples. By using this model we can explain the main optical characteristics measured. Moreover, after taking into account the bandgap renormalization energy, good agreement between experiment and theory is obtained.

Abstract: Radiative transition in $\delta$-doped GaAs superlattices with and without Al0.1Ga0.9As barriers is investigated by using photoluminescence at low temperatures. The experimental results show that the transition mechanism of $\delta$-doped superlattices is very different from that of ordinary superlattices. Emission intensity of the transition from the electron first excited state to hole states is obviously stronger than that from the electron ground state to hole states due to larger overlap integral between wavefunctions of electrons in the first excited state and hole states. Based on the effective mass theory we have calculated the self-consistent potentials, optical transition matrix elements and photoluminescence spectra for two different samples. By using this model we can explain the main optical characteristics measured. Moreover, after taking into account the bandgap renormalization energy, good agreement between experiment and theory is obtained.

中图分类号:  (Multilayers; superlattices; photonic structures; metamaterials)

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