中国物理B ›› 1993, Vol. 2 ›› Issue (10): 737-744.doi: 10.1088/1004-423X/2/10/003

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ABNORMAL ENERGY DEPENDENCE OF AXIAL MINIMUM CHANNELING YIELDS IN GexSi1-x/Si(100) STRAINED

黄孟兵, 赵国庆, 周筑颖, 汤家镛, 杨福家   

  1. Department of Physics Ⅱ, Fudan University, Shanghai 200433, China
  • 收稿日期:1992-09-22 出版日期:1993-10-20 发布日期:1993-10-20

ABNORMAL ENERGY DEPENDENCE OF AXIAL MINIMUM CHANNELING YIELDS IN GexSi1-x/Si(100) STRAINED

HUANG MENG-BING (黄孟兵), ZHAO GUO-QING (赵国庆), ZHOU ZHU-YING (周筑颖), TANG JIA-YONG (汤家镛), YANG FU-JIA (杨福家)   

  1. Department of Physics Ⅱ, Fudan University, Shanghai 200433, China
  • Received:1992-09-22 Online:1993-10-20 Published:1993-10-20

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摘要： An energy dependence of the axial minimum channeling yield in GexSi1-x/Si(100) Strained-layer superlattice is observed in the energy range of impinging He+ ione from 1.2 to 3.0 MeV. For [100] axial channeling, the measurements ere in agreement with what have been known in a single crystal. However, for [110] axial channeling, it is found that the minimum channeling yields increase markedly with the increase of He+ ion energy, which is contrary to the general channeling behaviors in a single crystal. A tentative model is suggested to explain this aberrance.

Abstract: An energy dependence of the axial minimum channeling yield in GexSi1-x/Si(100) Strained-layer superlattice is observed in the energy range of impinging He+ ione from 1.2 to 3.0 MeV. For [100] axial channeling, the measurements ere in agreement with what have been known in a single crystal. However, for [110] axial channeling, it is found that the minimum channeling yields increase markedly with the increase of He+ ion energy, which is contrary to the general channeling behaviors in a single crystal. A tentative model is suggested to explain this aberrance.

中图分类号:  (Channeling phenomena (blocking, energy loss, etc.) ?)

  • 61.85.+p
61.82.Fk (Semiconductors) 61.80.Jh (Ion radiation effects) 68.65.Cd (Superlattices)