中国物理B ›› 1992, Vol. 1 ›› Issue (2): 130-137.doi: 10.1088/1004-423X/1/2/007

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RAMAN SCATTERING INTENSITIES OF FOLDED LONGITUDINAL ACOUSTIC PHONONS IN GexSi1-x/Si SUPERLATTICES

金鹰1, 张树霖1, 秦国刚2, 樊永良3, 周国良3, 俞鸣人3   

  1. (1)Department of Physics and National Laboratory for Artificial Microstructure and Mesoscopic Physics. Peking University， Beijing 100871, China; (2)International Center for Materials Physics, Academia Sinica, Shenyang 110015, China; Department of Physics, Peking University, Beijing 100871, China; (3)Surface Physics Laboratory, Fudan University, Shanghai 200433, China
  • 收稿日期:1991-10-16 出版日期:1992-02-20 发布日期:1992-02-20
  • 基金资助:
    Project Supported by the National Natural Science Foundation of China, the foundation of Surface Physics Laboratory in Fudan University, the Doctoral Program Foundation of Institution of Higher Education, and the foundation of National Laboratory for Supe

RAMAN SCATTERING INTENSITIES OF FOLDED LONGITUDINAL ACOUSTIC PHONONS IN GexSi1-x/Si SUPERLATTICES

JIN YING (金鹰)a, ZHANG SHU-LIN (张树霖)a, QIN GUO-GANG (秦国刚)b, FAN YONG-LIANG (樊永良)c, ZHOU GOU-LIANG (周国良)c, YU MING-REN (俞鸣人)c   

  1. a Department of Physics and National Laboratory for Artificial Microstructure and Mesoscopic Physics. Peking University， Beijing 100871, China; b International Center for Materials Physics, Academia Sinica, Shenyang 110015, China; Department of Physics, Peking University, Beijing 100871, China; c Surface Physics Laboratory, Fudan University, Shanghai 200433, China
  • Received:1991-10-16 Online:1992-02-20 Published:1992-02-20
  • Supported by:
    Project Supported by the National Natural Science Foundation of China, the foundation of Surface Physics Laboratory in Fudan University, the Doctoral Program Foundation of Institution of Higher Education, and the foundation of National Laboratory for Supe

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摘要： In terms of photoelastic mechanism we have investigated the Raman scattering intensities of the folded longitudinal acoustic (FLA) phonons in GexSi1-x/ Si superlattices (SLs), taking into account the differences between the acoustic and photoelastic parameters of the two constituents in the SLs. The relative intensities calculated for the FLA phonons are in excellent agreement with the experimental results at the frequencies up to about 50 cm-1. The broadening of the linewidth arising from the so called strong acoustic attenuation, which was reported previously located around the frequency 15 cm-1 in GexSi1-x/Si SLs(x≈0.5), has not been observed in this work.

Abstract: In terms of photoelastic mechanism we have investigated the Raman scattering intensities of the folded longitudinal acoustic (FLA) phonons in GexSi1-x/ Si superlattices (SLs), taking into account the differences between the acoustic and photoelastic parameters of the two constituents in the SLs. The relative intensities calculated for the FLA phonons are in excellent agreement with the experimental results at the frequencies up to about 50 cm-1. The broadening of the linewidth arising from the so called strong acoustic attenuation, which was reported previously located around the frequency 15 cm-1 in GexSi1-x/Si SLs(x≈0.5), has not been observed in this work.

中图分类号:  (Diffusion of adsorbates, kinetics of coarsening and aggregation)

  • 68.43.Jk
87.15.R- (Reactions and kinetics) 82.65.+r (Surface and interface chemistry; heterogeneous catalysis at surfaces) 68.37.Ef (Scanning tunneling microscopy (including chemistry induced with STM))