Study and optimal simulation of 4H–SiC floating junction Schottky barrier diodes' structures and electric properties

doi:10.1088/1674-1056/19/10/107304

中国物理B ›› 2010, Vol. 19 ›› Issue (10): 107304-107304.doi: 10.1088/1674-1056/19/10/107304

Study and optimal simulation of 4H–SiC floating junction Schottky barrier diodes' structures and electric properties

蒲红斌¹, 曹琳¹, 任杰¹, 南雅公²

(1)Department of Electric Engineering, Faculty of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China; (2)Department of Electric Engineering, Faculty of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China; Department of Physics and Electronics, Hexi University, Zhangye 734000, Gansu Province, China

收稿日期:2009-07-16 修回日期:2010-04-05 出版日期:2010-10-15 发布日期:2010-10-15
基金资助:
Project supported by the Open Fund of Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, Ministry of Education of China.

Study and optimal simulation of 4H–SiC floating junction Schottky barrier diodes' structures and electric properties

Nan Ya-Gong(南雅公)^a)b)†, Pu Hong-Bin(蒲红斌)^a), Cao Lin(曹琳)^a), and Ren Jie(任杰)^a)

^a Department of Electric Engineering, Faculty of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China; ^b Department of Physics and Electronics, Hexi University, Zhangye 734000, Gansu Province, China

Received:2009-07-16 Revised:2010-04-05 Online:2010-10-15 Published:2010-10-15
Supported by:
Project supported by the Open Fund of Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, Ministry of Education of China.

摘要/Abstract

摘要： This paper stuides the structures of 4H--SiC floating junction Schottky barrier diodes. Some structure parameters of devices are optimized with commercial simulator based on forward and reverse electrical characteristics. Compared with conventional power Schottky barrier diodes, the devices are featured by highly doped drift region and embedded floating junction layers, which can ensure high breakdown voltage while keeping lower specific on-state resistance, and solve the contradiction between forward voltage drop and breakdown voltage. The simulation results show that with optimized structure parameter, the breakdown voltage can reach 4.36 kV and the specific on-resistance is 5.8 mΩ·cm² when the Baliga figure of merit value of 13.1 GW/cm² is achieved.

Abstract: This paper stuides the structures of 4H–SiC floating junction Schottky barrier diodes. Some structure parameters of devices are optimized with commercial simulator based on forward and reverse electrical characteristics. Compared with conventional power Schottky barrier diodes, the devices are featured by highly doped drift region and embedded floating junction layers, which can ensure high breakdown voltage while keeping lower specific on-state resistance, and solve the contradiction between forward voltage drop and breakdown voltage. The simulation results show that with optimized structure parameter, the breakdown voltage can reach 4.36 kV and the specific on-resistance is 5.8 m$\Omega$·cm² when the Baliga figure of merit value of 13.1 GW/cm² is achieved.

Key words: 4H–SiC, floating junction, Schottky barrier diode, optimization

中图分类号: (Impurities in crystals)

61.72.S-

73.30.+y (Surface double layers, Schottky barriers, and work functions) 73.40.-c (Electronic transport in interface structures) 73.61.Le (Other inorganic semiconductors) 85.30.Kk (Junction diodes)

南雅公, 蒲红斌, 曹琳, 任杰. Study and optimal simulation of 4H–SiC floating junction Schottky barrier diodes' structures and electric properties[J]. 中国物理B, 2010, 19(10): 107304-107304.

Nan Ya-Gong(南雅公), Pu Hong-Bin(蒲红斌), Cao Lin(曹琳), and Ren Jie(任杰). Study and optimal simulation of 4H–SiC floating junction Schottky barrier diodes' structures and electric properties[J]. Chin. Phys. B, 2010, 19(10): 107304-107304.

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Study and optimal simulation of 4H–SiC floating junction Schottky barrier diodes' structures and electric properties

Study and optimal simulation of 4H–SiC floating junction Schottky barrier diodes' structures and electric properties

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