A synaptic transistor with NdNiO3

doi:10.1088/1674-1056/aba60c

中国物理B ›› 2020, Vol. 29 ›› Issue (9): 98101-098101.doi: 10.1088/1674-1056/aba60c

所属专题： SPECIAL TOPIC — Physics in neuromorphic devices

A synaptic transistor with NdNiO₃

Xiang Wang(汪翔), Chen Ge(葛琛), Ge Li(李格), Er-Jia Guo(郭尔佳), Meng He(何萌), Can Wang(王灿), Guo-Zhen Yang(杨国桢), Kui-Juan Jin(金奎娟)

1 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 Songshan Lake Materials Laboratory, Dongguan 523808, China

收稿日期:2020-05-09 修回日期:2020-06-21 接受日期:2020-07-15 出版日期:2020-09-05 发布日期:2020-09-05
通讯作者: Chen Ge, Kui-Juan Jin E-mail:gechen@iphy.ac.cn;kjjin@iphy.ac.cn
基金资助:
Project supported by the National Key R&D Program of China (Grant Nos. 2017YFA0303604 and 2019YFA0308500), the National Natural Science Foundation of China (Grant Nos. 11674385, 11404380, 11721404, and 11874412), the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2018008), and the Key Research Program of Frontier Sciences, Chinese Academy of Sciences (Grant No. QYZDJSSW-SLH020).

A synaptic transistor with NdNiO₃

Xiang Wang(汪翔)^1,2, Chen Ge(葛琛)^1,2, Ge Li(李格)¹, Er-Jia Guo(郭尔佳)¹, Meng He(何萌)¹, Can Wang(王灿)^1,2,3, Guo-Zhen Yang(杨国桢)¹, Kui-Juan Jin(金奎娟)^1,2,3

1 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 Songshan Lake Materials Laboratory, Dongguan 523808, China

Received:2020-05-09 Revised:2020-06-21 Accepted:2020-07-15 Online:2020-09-05 Published:2020-09-05
Contact: Chen Ge, Kui-Juan Jin E-mail:gechen@iphy.ac.cn;kjjin@iphy.ac.cn
Supported by:
Project supported by the National Key R&D Program of China (Grant Nos. 2017YFA0303604 and 2019YFA0308500), the National Natural Science Foundation of China (Grant Nos. 11674385, 11404380, 11721404, and 11874412), the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2018008), and the Key Research Program of Frontier Sciences, Chinese Academy of Sciences (Grant No. QYZDJSSW-SLH020).

摘要/Abstract

摘要： Recently, neuromorphic devices for artificial intelligence applications have attracted much attention. In this work, a three-terminal electrolyte-gated synaptic transistor based on NdNiO₃ epitaxial films, a typical correlated electron material, is presented. The voltage-controlled metal-insulator transition was achieved by inserting and extracting H⁺ ions in the NdNiO₃ channel through electrolyte gating. The non-volatile conductance change reached 10⁴ under a 2 V gate voltage. By manipulating the amount of inserted protons, the three-terminal NdNiO₃ artificial synapse imitated important synaptic functions, such as synaptic plasticity and spike-timing-dependent plasticity. These results show that the correlated material NdNiO₃ has great potential for applications in neuromorphic devices.

关键词: synaptic transistor, electrolyte gating, artificial synapse, NdNiO₃, pulsed laser deposition

Abstract: Recently, neuromorphic devices for artificial intelligence applications have attracted much attention. In this work, a three-terminal electrolyte-gated synaptic transistor based on NdNiO₃ epitaxial films, a typical correlated electron material, is presented. The voltage-controlled metal-insulator transition was achieved by inserting and extracting H⁺ ions in the NdNiO₃ channel through electrolyte gating. The non-volatile conductance change reached 10⁴ under a 2 V gate voltage. By manipulating the amount of inserted protons, the three-terminal NdNiO₃ artificial synapse imitated important synaptic functions, such as synaptic plasticity and spike-timing-dependent plasticity. These results show that the correlated material NdNiO₃ has great potential for applications in neuromorphic devices.

Key words: pulsed laser deposition, synaptic transistor, electrolyte gating, artificial synapse, NdNiO₃

中图分类号: (Pulsed laser ablation deposition)

81.15.Fg

84.35.+i (Neural networks) 85.30.Tv (Field effect devices) 87.19.L- (Neuroscience)

汪翔, 葛琛, 李格, 郭尔佳, 何萌, 王灿, 杨国桢, 金奎娟. A synaptic transistor with NdNiO₃[J]. 中国物理B, 2020, 29(9): 98101-098101.

Xiang Wang(汪翔), Chen Ge(葛琛), Ge Li(李格), Er-Jia Guo(郭尔佳), Meng He(何萌), Can Wang(王灿), Guo-Zhen Yang(杨国桢), Kui-Juan Jin(金奎娟). A synaptic transistor with NdNiO₃[J]. Chin. Phys. B, 2020, 29(9): 98101-098101.

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A synaptic transistor with NdNiO₃

A synaptic transistor with NdNiO₃

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