Symmetry-broken silicon disk array as an efficient terahertz switch working with ultra-low optical pump power

doi:10.1088/1674-1056/ab9c0b

中国物理B ›› 2020, Vol. 29 ›› Issue (8): 84209-084209.doi: 10.1088/1674-1056/ab9c0b

所属专题： SPECIAL TOPIC —Terahertz physics

Symmetry-broken silicon disk array as an efficient terahertz switch working with ultra-low optical pump power

Zhanghua Han(韩张华), Hui Jiang(姜辉), Zhiyong Tan(谭智勇), Juncheng Cao(曹俊诚), Yangjian Cai(蔡阳健)

1 Shandong Provincial Key Laboratory of Optics and Photonic Devices, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China;
2 Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2020-03-30 修回日期:2020-05-21 出版日期:2020-08-05 发布日期:2020-08-05
通讯作者: Zhanghua Han E-mail:zhan@sdnu.edu.cn
基金资助:
Project supported by the National Key R&D Program of China (Grant No. 2017YFA0701005) and the National Natural Science Foundation of China (Grant Nos. 11974221, 91750201, 61927813, and 61775229). Z. Han also acknowledges the support from the Taishan Scholar Program of Shandong Province, China (Grant No. tsqn201909079) and Zhejiang Provincial Natural Science Foundation of China (Grant No. LY15F050008).

Symmetry-broken silicon disk array as an efficient terahertz switch working with ultra-low optical pump power

Zhanghua Han(韩张华)¹, Hui Jiang(姜辉)¹, Zhiyong Tan(谭智勇)^2,3, Juncheng Cao(曹俊诚)^2,3, Yangjian Cai(蔡阳健)¹

1 Shandong Provincial Key Laboratory of Optics and Photonic Devices, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China;
2 Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Received:2020-03-30 Revised:2020-05-21 Online:2020-08-05 Published:2020-08-05
Contact: Zhanghua Han E-mail:zhan@sdnu.edu.cn
Supported by:
Project supported by the National Key R&D Program of China (Grant No. 2017YFA0701005) and the National Natural Science Foundation of China (Grant Nos. 11974221, 91750201, 61927813, and 61775229). Z. Han also acknowledges the support from the Taishan Scholar Program of Shandong Province, China (Grant No. tsqn201909079) and Zhejiang Provincial Natural Science Foundation of China (Grant No. LY15F050008).

摘要/Abstract

摘要：

The advancement of terahertz technology in recent years and its applications in various fields lead to an urgent need for functional terahertz components, among which a terahertz switch is one example of the most importance because it provides an effective interface between terahertz signals and information in another physical quantity. To date many types of terahertz switches have been investigated mainly in the form of metamaterials made from metallic structures and optically-active medium. However, these reported terahertz switches usually suffer from an inferior performance, e.g., requiring a high pump laser power density due to a low quality factor of the metallic metamaterial resonances. In this paper, we report and numerically investigate a symmetry-broken silicon disk based terahertz resonator array which exhibits one resonance with ultrahigh quality factor for normal incidence of the terahertz radiations. This resonance, which can never be excited for regular circular Si disks, can help to realize a superior terahertz switch with which only an ultra-low optical pump power density is required to modify the free carrier concentration in Si and its refractive index in the terahertz band. Our findings demonstrate that to realize a high terahertz transmittance change from 0 to above 50%, the required optical pump power density is more than 3 orders of magnitude smaller than that required for a split-ring resonator (SRR) based terahertz switch reported in the literature.

关键词: silicon disk, symmetry-broken, terahertz switch, photocarrier, bound state in continuum

Abstract:

Key words: silicon disk, symmetry-broken, terahertz switch, photocarrier, bound state in continuum

中图分类号: (Resonators, cavities, amplifiers, arrays, and rings)

42.60.Da

42.79.Ta (Optical computers, logic elements, interconnects, switches; neural networks)

韩张华, 姜辉, 谭智勇, 曹俊诚, 蔡阳健. Symmetry-broken silicon disk array as an efficient terahertz switch working with ultra-low optical pump power[J]. 中国物理B, 2020, 29(8): 84209-084209.

Zhanghua Han(韩张华), Hui Jiang(姜辉), Zhiyong Tan(谭智勇), Juncheng Cao(曹俊诚), Yangjian Cai(蔡阳健). Symmetry-broken silicon disk array as an efficient terahertz switch working with ultra-low optical pump power[J]. Chin. Phys. B, 2020, 29(8): 84209-084209.

参考文献 20

[1]	Bigourd D, Cuisset A, Hindle F, Matton S, Fertein E, Bocquet R and Mouret G 2006 Opt. Lett. 31 2356 doi: 10.1364/OL.31.002356
[2]	Nagatsuma T, Ducournau G and Renaud C C 2016 Nat. Photon. 10 371 doi: 10.1038/nphoton.2016.65
[3]	Ma J, Karl N J, Bretin S, Ducournau G and Mittleman D M 2017 Nat. Commun. 8 1 doi: 10.1038/s41467-016-0009-6
[4]	Chanana A, Liu X, Zhang C, Vardeny Z V and Nahata A 2018 Sci. Adv. 4 eaar7353
[5]	Seo M, Kyoung J, Park H, Koo S, Kim H, Bernien H, Kim B J, Choe J H, Ahn Y H, Kim H, Park N, Park Q, Ahn K and Kim D 2010 Nano Lett. 10 2064 doi: 10.1021/nl1002153
[6]	Chen H, Padilla W J, Zide J M O, Gossard A C, Taylor A J and Averitt R D 2006 Nature 444 597 doi: 10.1038/nature05343
[7]	Chen H T, O'Hara J F, Azad A K, Taylor A J, Averitt R D, Shrekenhamer D B and Padilla W J 2008 Nat. Photon. 2 295 doi: 10.1038/nphoton.2008.52
[8]	Gu J, Singh R, Liu X, Zhang X, Ma Y, Zhang S, Maier S A, Tian Z, Azad A K, Chen H T, Taylor A J, Han J and Zhang W 2012 Nat. Commun. 3 1151 doi: 10.1038/ncomms2153
[9]	Kuznetsov A I, Miroshnichenko A E, Brongersma M L, Kivshar Y S, Luk'yanchuk B and Luk B 2016 Science 354 aag472
[10]	Sain B, Meier C and Zentgraf T 2019 Adv. Photon. 1 024002
[11]	Liu S, Sinclair M B, Saravi S, Keeler G A, Yang Y, Reno J, Peake G M, Setzpfandt F, Staude I, Pertsch T and Brener I 2016 Nano Lett. 16 5426 doi: 10.1021/acs.nanolett.6b01816
[12]	Hsu C W, Zhen B, Stone A D, Joannopoulos J D and Soljacic M 2016 Nat. Rev. Mater. 1 16048 doi: 10.1038/natrevmats.2016.48
[13]	Koshelev K, Bogdanov A and Kivshar Y 2019 Sci. Bull. 64 836 doi: 10.1016/j.scib.2018.12.003
[14]	Aspnes D E and Studna A A 1983 Phys. Rev. B 27 985 doi: 10.1103/PhysRevB.27.985
[15]	Zhang Y and Han Z 2015 AIP Adv. 5 017113 doi: 10.1063/1.4905888
[16]	Wang T, Shen S, Liu J, Zhang Y and Han Z 2016 Opt. Mater. Express 6 523 doi: 10.1364/OME.6.000523
[17]	Caughey D M and Thomas R E 1967 Proc. IEEE 55 2192 doi: 10.1109/PROC.1967.6123
[18]	Komma J, Schwarz C, Hofmann G, Heinert D and Nawrodt R 2012 Appl. Phys. Lett. 101 041905 doi: 10.1063/1.4738989
[19]	He X, Lin F, Liu F and Shi W 2020 J. Phys. D:Appl. Phys. 53 155105 doi: 10.1088/1361-6463/ab6ccc
[20]	He X, Lin F, Liu F and Zhang H 2020 Nanomaterials 10 39

Symmetry-broken silicon disk array as an efficient terahertz switch working with ultra-low optical pump power

Symmetry-broken silicon disk array as an efficient terahertz switch working with ultra-low optical pump power

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 20

相关文章 5

Metrics

本文评价

推荐阅读 0

[1]	Xiao-Ke Lei(雷晓轲), Bin-Cheng Li(李斌成), Qi-Ming Sun(孙启明), Jing Wang(王静), Chun-Ming Gao(高椿明), and Ya-Fei Wang(王亚非). Differential nonlinear photocarrier radiometry for characterizing ultra-low energy boron implantation in silicon[J]. 中国物理B, 2022, 31(3): 38102-038102.
[2]	Rui-Shu Yang(杨睿姝), Ding-Bang Wang(王定邦), Yang Zhao(赵阳), Shuan-Hu Wang(王拴虎), and Ke-Xin Jin(金克新). Large positive magnetoresistance in photocarrier-doped potassium tantalites[J]. 中国物理B, 2022, 31(12): 127302-127302.
[3]	刘俊岩, 宋鹏, 王飞, 王扬. Photocarrier radiometry for noncontact evaluation of space monocrystalline silicon solar cell under low-energy electron irradiation[J]. 中国物理B, 2015, 24(9): 97801-097801.
[4]	任胜东, 李斌成, 高丽峰, 王谦. Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers[J]. 中国物理B, 2013, 22(5): 57202-057202.
[5]	刘显明, 李斌成, 黄秋萍. Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers[J]. 中国物理B, 2010, 19(9): 97201-097201.