Point-contact spectroscopy on antiferromagnetic Kondo semiconductors CeT2Al10 (T=Ru and Os)

doi:10.1088/1674-1056/ab8dab

中国物理B ›› 2020, Vol. 29 ›› Issue (7): 77103-077103.doi: 10.1088/1674-1056/ab8dab

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Point-contact spectroscopy on antiferromagnetic Kondo semiconductors CeT₂Al₁₀ (T=Ru and Os)

Jie Li(李洁), Li-Qiang Che(车利强), Tian Le(乐天), Jia-Hao Zhang(张佳浩), Pei-Jie Sun(孙培杰), Toshiro Takabatake, Xin Lu(路欣)

1 Center for Correlated Matter and Department of Physics, Zhejiang University, Hangzhou 310058, China;
2 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
3 Department of Quantum Matter, ADSM, Hiroshima University, Higashi-Hiroshima, 739-8530, Japan;
4 Zhejiang Province Key Laboratory of Quantum Technology and Device, Zhejiang University, Hangzhou 310027, China;
5 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

收稿日期:2020-03-20 修回日期:2020-04-22 出版日期:2020-07-05 发布日期:2020-07-05
通讯作者: Xin Lu E-mail:xinluphy@zju.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFA0303101 and 2016FYA0300402), the National Natural Science Foundation of China (Grant Nos. 11674279, 11774404, and 11374257), the Zhejiang Provincial Natural Science Foundation of China (Grant No. LR18A04001), and the Japan Society for the Promotion of Science KAKENHI (Grant Nos. JP26400363, JP16H01076, and JP17K05545).

Point-contact spectroscopy on antiferromagnetic Kondo semiconductors CeT₂Al₁₀ (T=Ru and Os)

Jie Li(李洁)¹, Li-Qiang Che(车利强)¹, Tian Le(乐天)¹, Jia-Hao Zhang(张佳浩)², Pei-Jie Sun(孙培杰)², Toshiro Takabatake^1,3, Xin Lu(路欣)^1,4,5

1 Center for Correlated Matter and Department of Physics, Zhejiang University, Hangzhou 310058, China;
2 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
3 Department of Quantum Matter, ADSM, Hiroshima University, Higashi-Hiroshima, 739-8530, Japan;
4 Zhejiang Province Key Laboratory of Quantum Technology and Device, Zhejiang University, Hangzhou 310027, China;
5 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

Received:2020-03-20 Revised:2020-04-22 Online:2020-07-05 Published:2020-07-05
Contact: Xin Lu E-mail:xinluphy@zju.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFA0303101 and 2016FYA0300402), the National Natural Science Foundation of China (Grant Nos. 11674279, 11774404, and 11374257), the Zhejiang Provincial Natural Science Foundation of China (Grant No. LR18A04001), and the Japan Society for the Promotion of Science KAKENHI (Grant Nos. JP26400363, JP16H01076, and JP17K05545).

摘要/Abstract

摘要： We have carried out point-contact spectroscopy (PCS) measurements on one family of antiferromagnetic Kondo semiconductor CeT₂Al₁₀ (T=Ru and Os) with a Néel temperature T_N ～27.5 and 28.5 K, respectively. Their PCS conductance curves both exhibit a characteristic coherent double-peak-structure at temperatures below T_N, signaling an AFM gap around the Fermi surface. The temperature dependent AFM gap △₁ follows a Bardeen-Cooper-Schrieffer (BCS)-like mean-field behavior with a moderate gap anisotropy for PCS along different crystal axes. Another asymmetric gap-like feature is observed for both compounds at temperatures far below T_N, which is consistent with opening of a new hybridization gap △_h inside the long-range ordered AFM state. Our results suggest a common itinerant nature of the anomalous AFM ordering, constraining theoretical models to explain the AFM origin in CeRu₂Al₁₀ and CeOs₂Al₁₀.

关键词: point-contact spectroscopy, Kondo semiconductor, antiferromagnetism, hybridization gap

Abstract: We have carried out point-contact spectroscopy (PCS) measurements on one family of antiferromagnetic Kondo semiconductor CeT₂Al₁₀ (T=Ru and Os) with a Néel temperature T_N ～27.5 and 28.5 K, respectively. Their PCS conductance curves both exhibit a characteristic coherent double-peak-structure at temperatures below T_N, signaling an AFM gap around the Fermi surface. The temperature dependent AFM gap △₁ follows a Bardeen-Cooper-Schrieffer (BCS)-like mean-field behavior with a moderate gap anisotropy for PCS along different crystal axes. Another asymmetric gap-like feature is observed for both compounds at temperatures far below T_N, which is consistent with opening of a new hybridization gap △_h inside the long-range ordered AFM state. Our results suggest a common itinerant nature of the anomalous AFM ordering, constraining theoretical models to explain the AFM origin in CeRu₂Al₁₀ and CeOs₂Al₁₀.

Key words: point-contact spectroscopy, Kondo semiconductor, antiferromagnetism, hybridization gap

中图分类号: (Strongly correlated electron systems; heavy fermions)

71.27.+a

75.20.Hr (Local moment in compounds and alloys; Kondo effect, valence fluctuations, heavy fermions)

李洁, 车利强, 乐天, 张佳浩, 孙培杰, Toshiro Takabatake, 路欣. Point-contact spectroscopy on antiferromagnetic Kondo semiconductors CeT₂Al₁₀ (T=Ru and Os)[J]. 中国物理B, 2020, 29(7): 77103-077103.

Jie Li(李洁), Li-Qiang Che(车利强), Tian Le(乐天), Jia-Hao Zhang(张佳浩), Pei-Jie Sun(孙培杰), Toshiro Takabatake, Xin Lu(路欣). Point-contact spectroscopy on antiferromagnetic Kondo semiconductors CeT₂Al₁₀ (T=Ru and Os)[J]. Chin. Phys. B, 2020, 29(7): 77103-077103.

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Point-contact spectroscopy on antiferromagnetic Kondo semiconductors CeT₂Al₁₀ (T=Ru and Os)

Point-contact spectroscopy on antiferromagnetic Kondo semiconductors CeT₂Al₁₀ (T=Ru and Os)

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