Surface passivation in n-type silicon and its application insilicon drift detector

doi:10.1088/1674-1056/ab695e

中国物理B ›› 2020, Vol. 29 ›› Issue (3): 37702-037702.doi: 10.1088/1674-1056/ab695e

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Surface passivation in n-type silicon and its application insilicon drift detector

Yiqing Wu(吴怡清), Ke Tao(陶科), Shuai Jiang(姜帅), Rui Jia(贾锐), Ye Huang(黄也)

1 School of Physical and Electronic Science, Changsha University of Science and Technology, Changsha 410114, China;
2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2019-10-12 修回日期:2019-12-20 出版日期:2020-03-05 发布日期:2020-03-05
通讯作者: Ke Tao, Rui Jia E-mail:taoke@ime.ac.cn;imesolar@126.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51602340, 51702355, and 61674167), the Natural Science Foundation of Beijing Municipality of China (Grant No. 4192064), the National Key Research Program of China (Grant Nos. 2018YFB1500500 and 2018YFB1500200), and the JKW Project of China (Grant No. 31512060106).

Surface passivation in n-type silicon and its application insilicon drift detector

Yiqing Wu(吴怡清)^1,2, Ke Tao(陶科)², Shuai Jiang(姜帅)², Rui Jia(贾锐)², Ye Huang(黄也)¹

1 School of Physical and Electronic Science, Changsha University of Science and Technology, Changsha 410114, China;
2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2019-10-12 Revised:2019-12-20 Online:2020-03-05 Published:2020-03-05
Contact: Ke Tao, Rui Jia E-mail:taoke@ime.ac.cn;imesolar@126.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51602340, 51702355, and 61674167), the Natural Science Foundation of Beijing Municipality of China (Grant No. 4192064), the National Key Research Program of China (Grant Nos. 2018YFB1500500 and 2018YFB1500200), and the JKW Project of China (Grant No. 31512060106).

摘要/Abstract

摘要： Based on the surface passivation of n-type silicon in a silicon drift detector (SDD), we propose a new passivation structure of SiO₂/Al₂O₃/SiO₂ passivation stacks. Since the SiO₂ formed by the nitric-acid-oxidation-of-silicon (NAOS) method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al₂O₃ film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO₂ film is deposited by plasma enhanced chemical vapor deposition (PECVD). The deposition of the SiO₂ film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO₂ film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate. The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO₂/Al₂O₃/SiO₂, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.

关键词: SiO₂/Al₂O₃/SiO₂ stacks, chemical passivation, field passivation, silicon drift detector

Abstract: Based on the surface passivation of n-type silicon in a silicon drift detector (SDD), we propose a new passivation structure of SiO₂/Al₂O₃/SiO₂ passivation stacks. Since the SiO₂ formed by the nitric-acid-oxidation-of-silicon (NAOS) method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al₂O₃ film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO₂ film is deposited by plasma enhanced chemical vapor deposition (PECVD). The deposition of the SiO₂ film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO₂ film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate. The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO₂/Al₂O₃/SiO₂, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.

Key words: SiO₂/Al₂O₃/SiO₂ stacks, chemical passivation, field passivation, silicon drift detector

中图分类号: (Dielectric thin films)

77.55.-g

77.22.-d (Dielectric properties of solids and liquids) 77.22.-d (Dielectric properties of solids and liquids) 85.40.-e (Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)

吴怡清, 陶科, 姜帅, 贾锐, 黄也. Surface passivation in n-type silicon and its application insilicon drift detector[J]. 中国物理B, 2020, 29(3): 37702-037702.

Yiqing Wu(吴怡清), Ke Tao(陶科), Shuai Jiang(姜帅), Rui Jia(贾锐), Ye Huang(黄也). Surface passivation in n-type silicon and its application insilicon drift detector[J]. Chin. Phys. B, 2020, 29(3): 37702-037702.

参考文献 26

[1]	Gatti E and Rehak P 1984 Nucl. Instrum. Method 225 608 doi: 10.1016/0167-5087(84)90113-3
[2]	Campana R, Zampa G, Feroci M et al. 2011 Nucl. Instrum. Method A 633 22 doi: 10.1016/j.nima.2010.12.237
[3]	Bazzi M, Beer G, Bombelli L, Bragadireanu A M, Cargnelli M and Corradi G 2011 Nucl. Instrum. Method A 628 264 doi: 10.1016/j.nima.2010.06.332
[4]	Kikuchi R H and Kita K 2014 Appl. Phys. Lett. 105 032106 doi: 10.1063/1.4891166
[5]	Duttagupta S, Ma F J, Hoex B and Aberle A G 2014 SOL ENERG MAT SOL C 120 204 doi: 10.1016/j.solmat.2013.09.004
[6]	Zhao J and Wang A 2006 Appl. Phys. Lett. 88 242102 doi: 10.1063/1.2213927
[7]	Hoex B, Gielis J J H, van de Sanden M C M and Kessel W M M 2008 J. Appl. Phys. 104 113703 doi: 10.1063/1.3021091
[8]	Hoex B, Schmidt J, Pohl P, van de Sanden M C M and Kessels W M M 2008 J. Appl. Phys. 104 044903 doi: 10.1063/1.2963707
[9]	Maida O, Yamamoto H, Okada N, Kanashima T and Okuyama M 1988 Appl. Surf. Sci. 130 214
[10]	Leguijt C, Lölgen P, Eikelboom J A, Weeber A W, Schuurmans F M and Sinke W C 1996 Sol. Energy Mater. Sol. Cells 40 297 doi: 10.1016/0927-0248(95)00155-7
[11]	Asuha, Im S S, Tanaka M, Imai S, Takahashi M and Kobayashi H 2006 Surf. Sci. 600 2523 doi: 10.1016/j.susc.2006.04.015
[12]	Imai S, Mizushima S, Asuha, Kim W B and Kim W B 2008 Appl. Surf. Sci. 254 3685 doi: 10.1016/j.apsusc.2007.10.103
[13]	Fukaya Y, Yanase T, Kubota Y, Imai S, Matsumoto T and Kobayashi H 2010 Appl. Surf. Sci. 256 5610 doi: 10.1016/j.apsusc.2010.03.032
[14]	Agostinelli G, Delabie A, Vitanov P, Alexieva Z, Dekkers H, DeWolf S and Beaucarne G 2006 Sol. Energy Mater. Sol. Cells 90 3438 doi: 10.1016/j.solmat.2006.04.014
[15]	Hoex B, Schmidt J, Bock R, Altermatt P, vandeSanden M C M and Kessels W M M 2007 Appl. Phys. Lett. 91 112107 doi: 10.1063/1.2784168
[16]	Hoex B, Schmidt J, Pohl P, van de Sanden M C M and Kessels W M M 2008 J. Appl. Phys. 104 044903 doi: 10.1063/1.2963707
[17]	Vermang B, Goverde H, Lorenz A, Uruena A, Vereecke G and Meersschaut J 2011 IEEE Photovoltaic Specialists Conference, June 19-24, 2011, Seattle, WA, p. 3562
[18]	Peng Z W, Hsieh P T, Lin Y J, Huang C J and Li C C 201IEEE Silicon Photovoltaic Conference, June 14-19, 2015, New Orleans, LA, USA, p. 827
[19]	Dingemans G, Einsele F, Beyer W, van de Sanden M C M and Kessels W M M 2012 J. Appl. Phys. 111 093713 doi: 10.1063/1.4709729
[20]	Acero M C, Beldarrain O, Duch M, Zabala M, González M B and Campabadal F 2015 Spanish Conference on Electron Devices, February 11-13, 2015, Madrid, Spain, p. 7087443
[21]	Bao Y, Li S, von Gastrow G, Repo P, Savin H and Putkonen M 2015 J. Vac. Sci. Technol. A 33 01A123
[22]	Beldarrain O, Duch M, Zabala M, Rafí J M, González M B and Campabadal F 2013 J. Vac. Sci. Technol. A 31 01A128
[23]	Matsumoto T, Asuha and Kim W B 2009 Microelectron. Eng. 86 1939 doi: 10.1016/j.mee.2009.03.080
[24]	Asuha H K, Maida O and Takahashi M 2003 J. Appl. Phys. 94 7328 doi: 10.1063/1.1621720
[25]	Jiang S, Jia R, Tao K, Wu Y Q and Liu S 2019 J. Mater. Sci-Mater EL 30 6617 doi: 10.1007/s10854-019-00969-y
[26]	Metzger W, Engdahl J, Rossner W, Boslau O and Kemmer J 2004 IEEE Trans. Nucl. Sci. 51 1631 doi: 10.1109/TNS.2004.832666

Surface passivation in n-type silicon and its application insilicon drift detector

Surface passivation in n-type silicon and its application insilicon drift detector

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