›› 2014, Vol. 23 ›› Issue (12): 127801-127801.doi: 10.1088/1674-1056/23/12/127801

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Synthesis, structure, optical, and electric properties of Ce-doped CuInTe2 compound

付丽, 郭永权   

  1. School of Energy Power and Mechanical Engineering, North China Electric Power University, Beijing 102206, China
  • 收稿日期:2014-05-04 修回日期:2014-07-14 出版日期:2014-12-15 发布日期:2014-12-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 11274110).

Synthesis, structure, optical, and electric properties of Ce-doped CuInTe2 compound

Fu Li (付丽), Guo Yong-Quan (郭永权)   

  1. School of Energy Power and Mechanical Engineering, North China Electric Power University, Beijing 102206, China
  • Received:2014-05-04 Revised:2014-07-14 Online:2014-12-15 Published:2014-12-15
  • Contact: Guo Yong-Quan E-mail:yqguo@ncepu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 11274110).

摘要: Ce-doped CuInTe2 (CICT) semiconducting compounds are successfully synthesized. The phase structures, optical, and electric properties are investigated using powder X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), X-ray photoelectron spectrometer (XPS), Raman spectrometer, ultraviolet and visible spectrophotometer (UV-Vis), and a standard four-probe method. CuIn1-xCexTe2 crystallizes into a tetragonal structure with predominant orientation along the [112] direction. The lattice parameters are a=6.190(6) Å–6.193(0) Å and c=12.406(5) Å–12.409(5) Å. Ce prefers to occupy the 4b crystal position. According to the analysis of XPS spectra, Ce shows the mixture of valences 4+ and 3+. Raman spectra reveal that the photon vibrating model in the CICT follows A1 mode in a wavenumber range of 123 cm-1–128 cm-1. UV-Vis spectra show that the band gap Eg values before and after 0.1 mole Ce doped into CuInTe2 are 1.28 eV and 1.16 eV, respectively. It might be due to the mixture of valences for Ce. Ce doped into CuInTe2 still shows the semiconductor characteristics.

关键词: CuIn1-xCexTe2, chalcopyrite, Raman spectrum, band gap, semiconductor

Abstract: Ce-doped CuInTe2 (CICT) semiconducting compounds are successfully synthesized. The phase structures, optical, and electric properties are investigated using powder X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), X-ray photoelectron spectrometer (XPS), Raman spectrometer, ultraviolet and visible spectrophotometer (UV-Vis), and a standard four-probe method. CuIn1-xCexTe2 crystallizes into a tetragonal structure with predominant orientation along the [112] direction. The lattice parameters are a=6.190(6) Å–6.193(0) Å and c=12.406(5) Å–12.409(5) Å. Ce prefers to occupy the 4b crystal position. According to the analysis of XPS spectra, Ce shows the mixture of valences 4+ and 3+. Raman spectra reveal that the photon vibrating model in the CICT follows A1 mode in a wavenumber range of 123 cm-1–128 cm-1. UV-Vis spectra show that the band gap Eg values before and after 0.1 mole Ce doped into CuInTe2 are 1.28 eV and 1.16 eV, respectively. It might be due to the mixture of valences for Ce. Ce doped into CuInTe2 still shows the semiconductor characteristics.

Key words: CuIn1-xCexTe2, chalcopyrite, Raman spectrum, band gap, semiconductor

中图分类号:  (Optical properties of bulk materials and thin films)

  • 78.20.-e
61.50.-f (Structure of bulk crystals) 71.15.Ap (Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)) 72.20.-i (Conductivity phenomena in semiconductors and insulators)