Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template

doi:10.1088/1674-1056/23/1/016101

中国物理B ›› 2014, Vol. 23 ›› Issue (1): 16101-016101.doi: 10.1088/1674-1056/23/1/016101

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template

李俊泽, 陶岳彬, 陈志忠, 姜显哲, 付星星, 姜爽, 焦倩倩, 于彤军, 张国义

State Key Laboratory for Artificial Microstructures and Macroscopic Physics, School of Physics, Peking University, Beijing 100871, China

收稿日期:2013-04-14 修回日期:2013-06-27 出版日期:2013-11-12 发布日期:2013-11-12
基金资助:
Project supported by the National Basic Research Foundation of China (Grant Nos. TG2011CB301905 and TG2012CB619304) and the National Natural Science Foundation of China (Grant Nos. 60876063 and 61076012).

Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template

State Key Laboratory for Artificial Microstructures and Macroscopic Physics, School of Physics, Peking University, Beijing 100871, China

Received:2013-04-14 Revised:2013-06-27 Online:2013-11-12 Published:2013-11-12
Contact: Chen Zhi-Zhong E-mail:zzchen@pku.edu.cn
Supported by:
Project supported by the National Basic Research Foundation of China (Grant Nos. TG2011CB301905 and TG2012CB619304) and the National Natural Science Foundation of China (Grant Nos. 60876063 and 61076012).

摘要/Abstract

摘要： The high power GaN-based blue light emitting diode (LED) on an 80-μ-thick GaN template is proposed and even realized by several technical methods like metal organic chemical vapor deposition (MOCVD), hydride vapor-phase epitaxial (HVPE), and laser lift-off (LLO). Its advantages are demonstrated from material quality and chip processing. It is investigated by high resolution X-ray diffraction (XRD), high resolution transmission electron microscope (HRTEM), Rutherford back-scattering (RBS), photoluminescence, current-voltage and light output-current measurements. The width of (0002) reflection in XRD rocking curve, which reaches 173" for the thick GaN template LED, is less than that for the conventional one, which reaches 258". The HRTEM images show that the multiple quantum wells (MQWs) in 80-μm-thick GaN template LED have a generally higher crystal quality. The light output at 350 mA from the thick GaN template LED is doubled compared to traditional LEDs and the forward bias is also substantially reduced. The high performance of 80-μm-thick GaN template LED depends on the high crystal quality. However, although the intensity of MQWs emission in PL spectra is doubled, both the wavelength and the width of the emission from thick GaN template LED are increased. This is due to the strain relaxation on the surface of 80-μm-thick GaN template, which changes the strain in InGaN QWs and leads to InGaN phase separation.

关键词: homoepitaxy, strain relaxation, metal organic chemical vapor deposition (MOCVD), hydride vapor-phase epitaxy (HVPE)

Abstract: The high power GaN-based blue light emitting diode (LED) on an 80-μm-thick GaN template is proposed and even realized by several technical methods like metal organic chemical vapor deposition (MOCVD), hydride vapor-phase epitaxial (HVPE), and laser lift-off (LLO). Its advantages are demonstrated from material quality and chip processing. It is investigated by high resolution X-ray diffraction (XRD), high resolution transmission electron microscope (HRTEM), Rutherford back-scattering (RBS), photoluminescence, current-voltage and light output-current measurements. The width of (0002) reflection in XRD rocking curve, which reaches 173" for the thick GaN template LED, is less than that for the conventional one, which reaches 258". The HRTEM images show that the multiple quantum wells (MQWs) in 80-μm-thick GaN template LED have a generally higher crystal quality. The light output at 350 mA from the thick GaN template LED is doubled compared to traditional LEDs and the forward bias is also substantially reduced. The high performance of 80-μm-thick GaN template LED depends on the high crystal quality. However, although the intensity of MQWs emission in PL spectra is doubled, both the wavelength and the width of the emission from thick GaN template LED are increased. This is due to the strain relaxation on the surface of 80-μm-thick GaN template, which changes the strain in InGaN QWs and leads to InGaN phase separation.

Key words: homoepitaxy, strain relaxation, metal organic chemical vapor deposition (MOCVD), hydride vapor-phase epitaxy (HVPE)

中图分类号:

61.10.Nz

78.55.Cr (III-V semiconductors) 81.05.Ea (III-V semiconductors)

李俊泽, 陶岳彬, 陈志忠, 姜显哲, 付星星, 姜爽, 焦倩倩, 于彤军, 张国义. Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template[J]. 中国物理B, 2014, 23(1): 16101-016101.

Li Jun-Ze (李俊泽), Tao Yue-Bin (陶岳彬), Chen Zhi-Zhong (陈志忠), Jiang Xian-Zhe (姜显哲), Fu Xing-Xing (付星星), Jiang Shuang (姜爽), Jiao Qian-Qian (焦倩倩), Yu Tong-Jun (于彤军), Zhang Guo-Yi (张国义). Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template[J]. Chin. Phys. B, 2014, 23(1): 16101-016101.

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Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template

Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template

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