Electronic structure of a narrow-gap semiconductor KAg
3Te
2
Rong Feng(冯荣), Haotian Zheng(郑昊天), Haoran Liu(刘浩然), Binru Zhao(赵彬茹), Xunqing Yin(尹训庆), Zhihua Liu(刘智华), Feng Liu(刘峰), Guohua Wang(王国华), Xiaofeng Xu(许晓峰), Wentao Zhang(张文涛), Weidong Luo(罗卫东), Wei Zhou(周苇), and Dong Qian(钱冬)
Electronic structure of a narrow-gap semiconductor KAg
3Te
2
Rong Feng(冯荣), Haotian Zheng(郑昊天), Haoran Liu(刘浩然), Binru Zhao(赵彬茹), Xunqing Yin(尹训庆), Zhihua Liu(刘智华), Feng Liu(刘峰), Guohua Wang(王国华), Xiaofeng Xu(许晓峰), Wentao Zhang(张文涛), Weidong Luo(罗卫东), Wei Zhou(周苇), and Dong Qian(钱冬)
中国物理B
.
2025, (4): 47102
-047102
.
DOI: 10.1088/1674-1056/adb680