Effects of TMIn flow rate during quantum barrier growth on multi-quantum well material properties and device performance of GaN-based laser diodes
Zhenyu Chen(陈振宇), Degang Zhao(赵德刚), Feng Liang(梁锋), Zongshun Liu(刘宗顺), Jing Yang(杨静), and Ping Chen(陈平)
Effects of TMIn flow rate during quantum barrier growth on multi-quantum well material properties and device performance of GaN-based laser diodes
Zhenyu Chen(陈振宇), Degang Zhao(赵德刚), Feng Liang(梁锋), Zongshun Liu(刘宗顺), Jing Yang(杨静), and Ping Chen(陈平)
中国物理B
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2024, (12): 128102
-128102
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DOI: 10.1088/1674-1056/ad8624