Novel GaN-based double-channel p-heterostructure field-effect transistors with a p-GaN insertion layer
Xuerui Niu(牛雪锐), Bin Hou(侯斌), Meng Zhang(张濛), Ling Yang(杨凌), Mei Wu(武玫), Xinchuang Zhang(张新创), Fuchun Jia(贾富春), Chong Wang(王冲), Xiaohua Ma(马晓华), and Yue Hao(郝跃)
Novel GaN-based double-channel p-heterostructure field-effect transistors with a p-GaN insertion layer
Xuerui Niu(牛雪锐), Bin Hou(侯斌), Meng Zhang(张濛), Ling Yang(杨凌), Mei Wu(武玫), Xinchuang Zhang(张新创), Fuchun Jia(贾富春), Chong Wang(王冲), Xiaohua Ma(马晓华), and Yue Hao(郝跃)
中国物理B
.
2023, (10): 108101
-108101
.
DOI: 10.1088/1674-1056/acc7f4