Novel double channel reverse conducting GaN HEMT with an integrated MOS-channel diode
Xintong Xie(谢欣桐), Cheng Zhang(张成), Zhijia Zhao(赵智家), Jie Wei(魏杰),Xiaorong Luo(罗小蓉), and Bo Zhang(张波)
Novel double channel reverse conducting GaN HEMT with an integrated MOS-channel diode
Xintong Xie(谢欣桐), Cheng Zhang(张成), Zhijia Zhao(赵智家), Jie Wei(魏杰),Xiaorong Luo(罗小蓉), and Bo Zhang(张波)
中国物理B
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2023, (9): 98506
-098506
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DOI: 10.1088/1674-1056/ace248