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Saturation thickness of stacked SiO
2
in atomic-layer-deposited Al
2
O
3
gate on 4H-SiC
Zewei Shao(邵泽伟), Hongyi Xu(徐弘毅), Hengyu Wang(王珩宇), Na Ren(任娜), and Kuang Sheng(盛况)
Saturation thickness of stacked SiO
2
in atomic-layer-deposited Al
2
O
3
gate on 4H-SiC
Zewei Shao(邵泽伟), Hongyi Xu(徐弘毅), Hengyu Wang(王珩宇), Na Ren(任娜), and Kuang Sheng(盛况)
中国物理B . 2023, (
8
): 87106 -087106 . DOI: 10.1088/1674-1056/acd5c3