Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation
Ya-Hui Feng(冯亚辉), Hong-Xia Guo(郭红霞), Xiao-Yu Pan(潘霄宇), Jin-Xin Zhang(张晋新),Xiang-Li Zhong(钟向丽), Hong Zhang(张鸿), An-An Ju(琚安安),Ye Liu(刘晔), and Xiao-Ping Ouyang(欧阳晓平)
Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation
Ya-Hui Feng(冯亚辉), Hong-Xia Guo(郭红霞), Xiao-Yu Pan(潘霄宇), Jin-Xin Zhang(张晋新),Xiang-Li Zhong(钟向丽), Hong Zhang(张鸿), An-An Ju(琚安安),Ye Liu(刘晔), and Xiao-Ping Ouyang(欧阳晓平)
中国物理B
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2023, (6): 66105
-066105
.
DOI: 10.1088/1674-1056/ac8f3b