A non-quasi-static model for nanowire gate-all-around tunneling field-effect transistors
Bin Lu(芦宾), Xin Ma(马鑫), Dawei Wang(王大为), Guoqiang Chai(柴国强),Linpeng Dong(董林鹏), and Yuanhao Miao(苗渊浩)
A non-quasi-static model for nanowire gate-all-around tunneling field-effect transistors
Bin Lu(芦宾), Xin Ma(马鑫), Dawei Wang(王大为), Guoqiang Chai(柴国强),Linpeng Dong(董林鹏), and Yuanhao Miao(苗渊浩)
中国物理B
.
2023, (6): 68501
-068501
.
DOI: 10.1088/1674-1056/acbe32