A SiC asymmetric cell trench MOSFET with a split gate and integrated p
+-poly Si/SiC heterojunction freewheeling diode
Kaizhe Jiang(蒋铠哲), Xiaodong Zhang(张孝冬), Chuan Tian(田川), Shengrong Zhang(张升荣),Liqiang Zheng(郑理强), Rongzhao He(赫荣钊), and Chong Shen(沈重)
A SiC asymmetric cell trench MOSFET with a split gate and integrated p
+-poly Si/SiC heterojunction freewheeling diode
Kaizhe Jiang(蒋铠哲), Xiaodong Zhang(张孝冬), Chuan Tian(田川), Shengrong Zhang(张升荣),Liqiang Zheng(郑理强), Rongzhao He(赫荣钊), and Chong Shen(沈重)
中国物理B
.
2023, (5): 58504
-058504
.
DOI: 10.1088/1674-1056/acbd2d