SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current
Baoxing Duan(段宝兴), Kaishun Luo(罗开顺), and Yintang Yang(杨银堂)
SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current
Baoxing Duan(段宝兴), Kaishun Luo(罗开顺), and Yintang Yang(杨银堂)
中国物理B . 2023, (4): 47702 -047702 .  DOI: 10.1088/1674-1056/ac80ab