Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high- K/low- K compound dielectric structure
Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇)
Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high- K/low- K compound dielectric structure
Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇)
中国物理B . 2023, (1): 17306 -017306 .  DOI: 10.1088/1674-1056/ac8e99