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Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-
K
/low-
K
compound dielectric structure
Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇)
Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-
K
/low-
K
compound dielectric structure
Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇)
中国物理B . 2023, (
1
): 17306 -017306 . DOI: 10.1088/1674-1056/ac8e99