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An insulated-gate bipolar transistor model based on the finite-volume charge method
Manhong Zhang(张满红) and Wanchen Wu(武万琛)
An insulated-gate bipolar transistor model based on the finite-volume charge method
Manhong Zhang(张满红) and Wanchen Wu(武万琛)
中国物理B . 2022, (
12
): 128501 -128501 . DOI: 10.1088/1674-1056/ac8723