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A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance
Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲)
A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance
Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲)
中国物理B . 2022, (
7
): 78501 -078501 . DOI: 10.1088/1674-1056/ac4e08