A high rectification efficiency Si 0.14Ge 0.72Sn 0.14–Ge 0.82Sn 0.18–Ge quantum structure n-MOSFET for 2.45 GHz weak energy microwave wireless energy transmission

A high rectification efficiency Si _0.14Ge _0.72Sn _0.14–Ge _0.82Sn _0.18–Ge quantum structure n-MOSFET for 2.45 GHz weak energy microwave wireless energy transmission

Dong Zhang(张栋), Jianjun Song(宋建军), Xiaohuan Xue(薛笑欢), and Shiqi Zhang(张士琦)

A high rectification efficiency Si _0.14Ge _0.72Sn _0.14–Ge _0.82Sn _0.18–Ge quantum structure n-MOSFET for 2.45 GHz weak energy microwave wireless energy transmission

Dong Zhang(张栋), Jianjun Song(宋建军), Xiaohuan Xue(薛笑欢), and Shiqi Zhang(张士琦)

中国物理B . 2022, (6): 68401 -068401 . DOI: 10.1088/1674-1056/ac339e