Enhancement of
f
MAX of InP-based HEMTs by double-recessed offset gate process
Bo Wang(王博), Peng Ding(丁芃), Rui-Ze Feng(封瑞泽), Shu-Rui Cao(曹书睿), Hao-Miao Wei(魏浩淼), Tong Liu(刘桐), Xiao-Yu Liu(刘晓宇), Hai-Ou Li(李海鸥), and Zhi Jin(金智)
Enhancement of
f
MAX of InP-based HEMTs by double-recessed offset gate process
Bo Wang(王博), Peng Ding(丁芃), Rui-Ze Feng(封瑞泽), Shu-Rui Cao(曹书睿), Hao-Miao Wei(魏浩淼), Tong Liu(刘桐), Xiao-Yu Liu(刘晓宇), Hai-Ou Li(李海鸥), and Zhi Jin(金智)
中国物理B
.
2022, (5): 58506
-058506
.
DOI: 10.1088/1674-1056/ac6013