Impact of gate offset in gate recess on DC and RF performance of InAlAs/InGaAs InP-based HEMTs
Shurui Cao(曹书睿), Ruize Feng(封瑞泽), Bo Wang(王博), Tong Liu(刘桐), Peng Ding(丁芃), and Zhi Jin(金智)
Impact of gate offset in gate recess on DC and RF performance of InAlAs/InGaAs InP-based HEMTs
Shurui Cao(曹书睿), Ruize Feng(封瑞泽), Bo Wang(王博), Tong Liu(刘桐), Peng Ding(丁芃), and Zhi Jin(金智)
中国物理B
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2022, (5): 58502
-058502
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DOI: 10.1088/1674-1056/ac464f