Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors
Zheng-Zhao Lin(林正兆), Ling Lü(吕玲), Xue-Feng Zheng(郑雪峰), Yan-Rong Cao(曹艳荣), Pei-Pei Hu(胡培培), Xin Fang(房鑫), and Xiao-Hua Ma(马晓华)
Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors
Zheng-Zhao Lin(林正兆), Ling Lü(吕玲), Xue-Feng Zheng(郑雪峰), Yan-Rong Cao(曹艳荣), Pei-Pei Hu(胡培培), Xin Fang(房鑫), and Xiao-Hua Ma(马晓华)
中国物理B
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2022, (3): 36103
-036103
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DOI: 10.1088/1674-1056/ac11e4