Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices
Ren-Ren Xu(徐忍忍), Qing-Zhu Zhang(张青竹), Long-Da Zhou(周龙达), Hong Yang(杨红), Tian-Yang Gai(盖天洋), Hua-Xiang Yin(殷华湘), and Wen-Wu Wang(王文武)
Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices
Ren-Ren Xu(徐忍忍), Qing-Zhu Zhang(张青竹), Long-Da Zhou(周龙达), Hong Yang(杨红), Tian-Yang Gai(盖天洋), Hua-Xiang Yin(殷华湘), and Wen-Wu Wang(王文武)
中国物理B
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2022, (1): 17301
-017301
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DOI: 10.1088/1674-1056/ac1410