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Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress
Jianing Guo(郭佳宁), Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Huaisheng Wang(王槐生)
Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress
Jianing Guo(郭佳宁), Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Huaisheng Wang(王槐生)
中国物理B . 2021, (
11
): 118102 -118102 . DOI: 10.1088/1674-1056/ac05aa