Impact of oxygen in electrical properties and hot-carrier stress-induced degradation of GaN high electron mobility transistors
Lixiang Chen(陈丽香), Min Ma(马敏), Jiecheng Cao(曹杰程), Jiawei Sun(孙佳惟), Miaoling Que(阙妙玲), and Yunfei Sun(孙云飞)
Impact of oxygen in electrical properties and hot-carrier stress-induced degradation of GaN high electron mobility transistors
Lixiang Chen(陈丽香), Min Ma(马敏), Jiecheng Cao(曹杰程), Jiawei Sun(孙佳惟), Miaoling Que(阙妙玲), and Yunfei Sun(孙云飞)
中国物理B
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2021, (10): 108502
-108502
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DOI: 10.1088/1674-1056/ac1efd