Impact of O
2 post oxidation annealing on the reliability of SiC/SiO
2 MOS capacitors
Peng Liu(刘鹏), Ji-Long Hao(郝继龙), Sheng-Kai Wang(王盛凯), Nan-Nan You(尤楠楠), Qin-Yu Hu(胡钦宇), Qian Zhang(张倩), Yun Bai(白云), and Xin-Yu Liu(刘新宇)
Impact of O
2 post oxidation annealing on the reliability of SiC/SiO
2 MOS capacitors
Peng Liu(刘鹏), Ji-Long Hao(郝继龙), Sheng-Kai Wang(王盛凯), Nan-Nan You(尤楠楠), Qin-Yu Hu(胡钦宇), Qian Zhang(张倩), Yun Bai(白云), and Xin-Yu Liu(刘新宇)
中国物理B
.
2021, (7): 77303
-077303
.
DOI: 10.1088/1674-1056/abf644