Vertical MBE growth of Si fins on sub-10 nm patterned substrate for high-performance FinFET technology
Shuang Sun(孙爽), Jian-Huan Wang(王建桓), Bao-Tong Zhang(张宝通), Xiao-Kang Li(李小康), Qi-Feng Cai(蔡其峰), Xia An(安霞), Xiao-Yan Xu(许晓燕), Jian-Jun Zhang(张建军), and Ming Li(黎明)
Vertical MBE growth of Si fins on sub-10 nm patterned substrate for high-performance FinFET technology
Shuang Sun(孙爽), Jian-Huan Wang(王建桓), Bao-Tong Zhang(张宝通), Xiao-Kang Li(李小康), Qi-Feng Cai(蔡其峰), Xia An(安霞), Xiao-Yan Xu(许晓燕), Jian-Jun Zhang(张建军), and Ming Li(黎明)
中国物理B
.
2021, (7): 78104
-078104
.
DOI: 10.1088/1674-1056/abf63f