Band alignment between NiO
x and nonpolar/semipolar GaN planes for selective-area-doped termination structure
Ji-Yao Du(都继瑶), Ji-Yu Zhou(周继禹), Xiao-Bo Li(李小波), Tao-Fei Pu(蒲涛飞), Liu-An Li(李柳暗), Xin-Zhi Liu(刘新智), and Jin-Ping Ao(敖金平)
Band alignment between NiO
x and nonpolar/semipolar GaN planes for selective-area-doped termination structure
Ji-Yao Du(都继瑶), Ji-Yu Zhou(周继禹), Xiao-Bo Li(李小波), Tao-Fei Pu(蒲涛飞), Liu-An Li(李柳暗), Xin-Zhi Liu(刘新智), and Jin-Ping Ao(敖金平)
中国物理B
.
2021, (6): 67701
-067701
.
DOI: 10.1088/1674-1056/abdb21