Terminal-optimized 700-V LDMOS with improved breakdown voltage and ESD robustness
Jie Xu(许杰), Nai-Long He(何乃龙), Hai-Lian Liang(梁海莲), Sen Zhang(张森), Yu-De Jiang(姜玉德), and Xiao-Feng Gu(顾晓峰)
Terminal-optimized 700-V LDMOS with improved breakdown voltage and ESD robustness
Jie Xu(许杰), Nai-Long He(何乃龙), Hai-Lian Liang(梁海莲), Sen Zhang(张森), Yu-De Jiang(姜玉德), and Xiao-Feng Gu(顾晓峰)
中国物理B
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2021, (6): 67303
-067303
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DOI: 10.1088/1674-1056/abdda7