Analysis on degradation mechanisms of normally-off p-GaN gate AlGaN/GaN high-electron mobility transistor
Si-De Song(宋思德), Su-Zhen Wu(吴素贞), Guo-Zhu Liu(刘国柱), Wei Zhao(赵伟), Yin-Quan Wang(王印权), Jian-Wei Wu(吴建伟), and Qi He(贺琪)
中国物理B . 2021, (4): 47103 .  DOI: 10.1088/1674-1056/abccba