A novel high breakdown voltage and high switching speed GaN HEMT with p-GaN gate and hybrid AlGaN buffer layer for power electronics applications
Yong Liu(刘勇), Qi Yu(于奇), and Jiang-Feng Du(杜江锋)
中国物理B . 2020, (12): 127701 .  DOI: 10.1088/1674-1056/abaee5