Simulation study of device physics and design of GeOI TFET with PNN structure and buried layer for high performance
Bin Wang(王斌), Sheng Hu(胡晟), Yue Feng(冯越), Peng Li(李鹏), Hui-Yong Hu(胡辉勇), Bin Shu(舒斌)
中国物理B . 2020, (10): 107401 .  DOI: 10.1088/1674-1056/ab99b5