Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO
2 and Al
2O
3 gate insulators
赵垚澎, 王冲, 郑雪峰, 马晓华, 刘凯, 李昂, 何云龙, 郝跃
Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO
2 and Al
2O
3 gate insulators
Yao-Peng Zhao(赵垚澎), Chong Wang(王冲), Xue-Feng Zheng(郑雪峰), Xiao-Hua Ma(马晓华), Kai Liu(刘凯), Ang Li(李昂), Yun-Long He(何云龙), Yue Hao(郝跃)
中国物理B
.
2020, (8): 87304
-087304
.
DOI: 10.1088/1674-1056/ab8daa