Variable- K double trenches SOI LDMOS with high-concentration P-pillar
吴丽娟, 朱琳, 陈星
Variable- K double trenches SOI LDMOS with high-concentration P-pillar
Lijuan Wu(吴丽娟), Lin Zhu(朱琳), Xing Chen(陈星)
中国物理B . 2020, (5): 57701 -057701 .  DOI: 10.1088/1674-1056/ab7e94