Surface potential-based analytical model for InGaZnO thin-film transistors with independent dual-gates
何伊妮, 邓联文, 覃婷, 廖聪维, 罗衡, 黄生祥
Surface potential-based analytical model for InGaZnO thin-film transistors with independent dual-gates
Yi-Ni He(何伊妮), Lian-Wen Deng(邓联文), Ting Qin(覃婷), Cong-Wei Liao(廖聪维), Heng Luo(罗衡), Sheng-Xiang Huang(黄生祥)
中国物理B
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2020, (4): 47102
-047102
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DOI: 10.1088/1674-1056/ab75d2