Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination
王伟凡, 王建峰, 张育民, 李腾坤, 熊瑞, 徐科
Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination
Wei-Fan Wang(王伟凡), Jian-Feng Wang(王建峰), Yu-Min Zhang(张育民), Teng-Kun Li(李腾坤), Rui Xiong(熊瑞), Ke Xu(徐科)
中国物理B
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2020, (4): 47305
-047305
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DOI: 10.1088/1674-1056/ab7909