Investigation of gate oxide traps effect on NAND flash memory by TCAD simulation
章合坤, 田璇, 何俊鹏, 宋哲, 蔚倩倩, 李靓, 李明, 赵连城, 高立明
Investigation of gate oxide traps effect on NAND flash memory by TCAD simulation
He-Kun Zhang(章合坤), Xuan Tian(田璇), Jun-Peng He(何俊鹏), Zhe Song(宋哲), Qian-Qian Yu(蔚倩倩), Liang Li(李靓), Ming Li(李明), Lian-Cheng Zhao(赵连城), Li-Ming Gao(高立明)
中国物理B
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2020, (3): 38501
-038501
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DOI: 10.1088/1674-1056/ab695f