High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation
刘新宇, 郝继龙, 尤楠楠, 白云, 汤益丹, 杨成樾, 王盛凯
High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation
Xin-Yu Liu(刘新宇), Ji-Long Hao(郝继龙), Nan-Nan You(尤楠楠), Yun Bai(白云), Yi-Dan Tang(汤益丹), Cheng-Yue Yang(杨成樾), Sheng-Kai Wang(王盛凯)
中国物理B
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2020, (3): 37301
-037301
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DOI: 10.1088/1674-1056/ab68c0