Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device
叶兵, 莫莉华, 刘涛, 罗捷, 李东青, 赵培雄, 蔡畅, 贺泽, 孙友梅, 侯明东, 刘杰
Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device
Bing Ye(叶兵), Li-Hua Mo(莫莉华), Tao Liu(刘涛), Jie Luo(罗捷), Dong-Qing Li(李东青), Pei-Xiong Zhao(赵培雄), Chang Cai(蔡畅), Ze He(贺泽), You-Mei Sun(孙友梅), Ming-Dong Hou(侯明东), Jie Liu(刘杰)
中国物理B
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2020, (2): 26101
-026101
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DOI: 10.1088/1674-1056/ab5fc4