Improved interfacial properties of HfGdON gate dielectric Ge MOS capacitor by optimizing Gd content

周琳, 刘璐, 邓煜恒, 李春霞, 徐静平

Lin Zhou(周琳), Lu Liu(刘璐), Yu-Heng Deng(邓煜恒), Chun-Xia Li(李春霞), Jing-Ping Xu(徐静平)

中国物理B . 2019, (12): 127703 -127703 . DOI: 10.1088/1674-1056/ab4e7e