Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons
金晓明, 陈伟, 李俊霖, 齐超, 郭晓强, 李瑞宾, 刘岩
Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons
Xiao-Ming Jin(金晓明), Wei Chen(陈伟), Jun-Lin Li(李俊霖), Chao Qi(齐超), Xiao-Qiang Guo(郭晓强), Rui-Bin Li(李瑞宾), Yan Liu(刘岩)
中国物理B
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2019, (10): 104212
-104212
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DOI: 10.1088/1674-1056/ab4175