Improving robustness of GGNMOS with P-base layer for electrostatic discharge protection in 0.5-μm BCD process
侯飞, 陈瑞博, 杜飞波, 刘继芝, 刘志伟, 刘俊杰
Improving robustness of GGNMOS with P-base layer for electrostatic discharge protection in 0.5-μm BCD process
Fei Hou(侯飞), Ruibo Chen(陈瑞博), Feibo Du(杜飞波), Jizhi Liu(刘继芝), Zhiwei Liu(刘志伟), Juin J Liou(刘俊杰)
中国物理B
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2019, (8): 88501
-088501
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DOI: 10.1088/1674-1056/28/8/088501